POWER MOSFET SiC

The only full-SiC module from Wolfspeed for industrial applications with high-performance packaging.

The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 31% from 2017-2023. The Wolfspeed CAS325M12HM2 represents a new generation of all-SiC power modules enabling unprecedented efficiency and power density for high current power electronics. It allows designers to realize lighter weight systems and to achieve improvements in power density compared to using silicon-based technologies.

CAS325M12HM2 is the only All-SiC Module from Wolfspeed, housed in a low-profile high-performance package resulting from Wolfspeed’s acquisition of APEI. The superior thermal characteristics of SiC devices, along with the package design and materials, enable this module to operate at 175°C. This is a key advantage for many industrial, aerospace, and automotive applications. The company claims the design is optimized to reap the benefits of SiC technology and boasts a 66% reduction in module inductance to 5.5nH comparing to 15nH in competing products.

System Plus Consulting presents a deep technical and economic analysis of the CAS325M12HM2 module. Supported by a full teardown of the module’s dies and housing, this report reveals Wolfspeed’s innovative assets that enable it to assemble SiC dies in high-performance packaging.

This report includes an estimated manufacturing cost of all the module’s components and its selling price analysis. It proposes a comparison with the SiC module CAS120M12BM2 from the same manufacturer. Also, it includes a detailed comparison with Wolfspeed’s competitors’ 1200V SiC Modules solutions.

Moreover, the report includes a comparison with STMicroelectronics and Rohm’s 1200V SiC MOSFET and finally a comparison between 1200V Si IGBTs and SiC MOSFETs. These comparisons highlight differences in the electrical parameters, packaging, die characteristics, and production costs.

 

Overview/Introduction

• Executive Summary and Market
• Reverse Costing Methodology and Glossary

Company Profile

• Cree/Wolfspeed Profile and Product Portfolio
• Supply Chain

Physical Analysis

• Overview of the Physical Analysis
• Package Analysis
  • Package opening
  • Package cross-section
• SiC MOSFET Die
  • MOSFET die view and dimensions
  • MOSFET die process and cross-section
• SiC Diode Die
  • Diode die view and dimensions
  • Diode die process and cross-section

Manufacturing Process Flow

• SiC MOSFET and SiC diode Front-End Process and Fabrication Unit
• Final Test and Packaging Process Flow and Fabrication Unit

Cost Analysis

• Overview of the Cost Analysis, Yield Explanations and Hypotheses
• MOSFET Die
  • MOSFET front-end cost
  • MOSFET die probe test, thinning and dicing
  • MOSFET wafer cost and die cost
• SiC Diode Die
  • Diode front-end cost
  • Diode die probe test, thinning and dicing
  • Diode wafer cost and die cost
• Packaging Cost
• Complete Module Cost
  • Packaging cost
  • Final test cost and component cost

Price Analysis

• Estimation of Selling Price

Comparison

• Comparison with Cree SiC Module CAS120M12BM2
• Comparison with Rohm and Infineon SiC Modules
• STMicroelectronics vs Cree vs Rohm 1200V SiC MOSFETs
  1200V Si IGBTs vs SiC MOSFETs

• SiC MOSFET Comparison 2019
• 1200V Silicon IGBT vs SiC MOSFET Comparison 2018
• Wolfspeed C2M 1200V SiC MOSFET C2M0025120D
• ABB LinPak 1700V 2x1000A Power Module
• Qorvo QPF4006 39GHz GaN MMIC Front End Module
• Mitsubishi J1- Series 650V High-Power Modules for Automotive
• Rohm SiC MOSFET Gen3 Trench Design Family
• 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon
• Wolfspeed SiC 900V MOSFET
• GaN-on-Sapphire HEMT Power IC by Power Integrations