POWER MOSFET

Discover Cree’s crucial role in strategic choices for medium voltage SiC MOSFETs.

SiC MOSFET penetration in industrial applications is expanding, but not as fast as it could. The market outlook for SiC devices is promising with a compound annual growth rate of 28% from 2016 to 2020. This will increase to 40% from 2020 to 2022 due to growth in industrial applications. Therefore, the total SiC market will exceed $1B in 2022. But high manufacturing costs and integration problems are slowing the market integration process.

Wolfspeed offers a complete series of SiC products from 900V up to 1700V using Cree, which it used to be part of, for all of its supply needs. Differently to other manufacturers like Rohm, which uses trench structure for 1200V and planar for 1700V products, Wolfspeed uses planar structure for all the voltages. Moreover, Cree enables a unique triple implantation process and a silicide source contact to improve contact resistance.

The C2M0025120D is a 1200V SiC MOSFET from Wolfspeed. It is marketed for industrial power supplies in uses such as motor drives, as well as photovoltaics, uninterruptible power supplies, battery charging and energy storage systems.  The device offers a low on-resistance of 25mΩ but very high current density of 3.5 A/mm². It integrates the second generation high-voltage SiC planar power MOSFET dies that achieve 90A current.

Thanks to the die design the device’s cost is very competitive. The gate structure is very simple, and the packaging is optimized to save costs.

The report presents a deep technology analysis of the package and components, with images of the planar SiC structure.

It also includes comparisons with Rohm and STmicroelectronics’ SiC MOSFETs and 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.

        

Introduction

• Executive Summary
• Reverse Costing Methodology
• Glossary
• SiC Power Device Market

Company Profile

• Wolfspeed
• Portfolio
• Supply Chain

Physical Analysis

• Summary of the Physical Analysis
• Package Analysis
  • Package opening
  • Package cross-section
• MOSFET Die
  • MOSFET die view and dimensions
  • MOSFET delayering and main blocks
  • MOSFET die process
  • MOSFET die cross-section
  • MOSFET die process characteristic
• Manufacturing Process
  • MOSFET die front-end process
  • MOSFET fabrication unit
  • Packaging process and fabrication unit

Cost Analysis

• Summary of the Cost Analysis
• Yield Explanations and Hypotheses
• MOSFET Die
  • MOSFET die front-end cost
  • MOSFET die probe test, thinning and dicing
  • MOSFET die wafer cost
  • MOSFET die cost
• Complete Device
  • Assembled components cost
  • Summary of the assembly
  • Component cost
• Selling Price

Comparison Between 1200V SiC MOSFETs           

• 1200V Silicon IGBT vs SiC MOSFET Comparison 2018
• 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon
• Qorvo QPF4006 39GHz GaN MMIC Front End Module
• UnitedSiC UJN1205K 1200V SiC JFET
• Power Discrete Packaging Comparison 2018
• Wolfspeed SiC 900V MOSFET
• Rohm SiC MOSFET Gen3 Trench Design Family
• GaN Systems GS61004B GaN HEMT
• Littelfuse Silicon Carbide MOSFET LSIC1MO120E0080: 1200V 25A 80mOhms
• GaN-on-Silicon Transistor Comparison 2018