Compound Semiconductors And Emerging Substrates

Discover the XM3 conduction-optimized module from Wolfspeed implementing the latest packaging and 1200V SiC die generations.

The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 29% from 2018-2024.
Taking advantage of this growing market, SiC-based device penetration is expanding in different applications, raising competitiveness of both die and SiC module solutions. Module solutions are seeking not only loss reduction and improved efficiency but also improved packaging.

Launched in 2019 and housed in XM3 optimized packaging, the CAB450M12XM3 represents the newest generation of all-SiC modules from Wolfspeed. For reference, the first generation was launched in 2016 and was analyzed in our report “SP19416 – Wolfspeed CAS325M12HM2 All-SiC 1200V Power Module”.
With half the weight and volume of a standard 62mm module, the XM3 SiC power module enables the highest power density in the SiC modules platform offered by Wolfspeed.

The module implements conduction-optimized third-generation SiC MOSFETs in a 1200V half-bridge configuration, with a current rating of 450A. The superior thermal characteristics of SiC devices, along with the XM3’s optimized SiC packaging and materials, enable this module to operate at 175°C. This is a key advantage for many industrial, aerospace, and automotive applications.

This report deeply analyzes the CAB450M12XM3 module. Supported by a full teardown of the module’s components and housing, this report reveals Cree/Wolfspeed’s innovative assets that enable it to assemble its module in its newest generation XM3 SiC packaging.

This report includes an estimated manufacturing cost of all the module’s components and a selling price analysis. It proposes a comparison with the previous generation all-SiC module CAS325M12HM2 from the same manufacturer. Also, we include a comparison between the second generation C2M and third generation C3M SiC MOSFET dies from Cree used in these two modules.
Moreover, the report includes a comparison with Wolfspeed/Cree’s competitors’ 1200V SiC Modules solutions to highlight differences in the electrical parameters, technology, packaging, die characteristics, and production costs.

Overview/Introduction

• Executive Summary
• Market, Reverse Costing Methodology, and Glossary

Company Profile

• Cree/Wolfspeed Profile
• Module Product Portfolio, Supply Chain

Physical Analysis

• Overview of the Physical Analysis
• Package Analysis
  • Package Opening
  • Package Cross-Section
• NTC Temperature Sensor
  • NTC Die View and Dimensions
  • NTC Cross-Section
• SiC MOSFET Die
  • MOSFET Die View, Dimensions and Process
  • MOSFET Die Cross-Section

Manufacturing Process

• SiC MOSFET Front-End Process and Fabrication Unit
• Packaging Process Flow, Final Test and Packaging Fabrication unit

Cost Analysis

• Overview of the Cost Analysis, Yield Explanations and Hypotheses
• SiC MOSFET
  • MOSFET Front-End Cost
  • MOSFET Wafer Cost by Process Step
  • MOSFET Die Probe Test & Dicing
  • MOSFET Die Cost
• Packaging Cost
  • Module BOM Cost
  • Package Assembly Cost
• Complete Module Cost
  • Test Cost and Final Module Cost

Selling Price Analysis

• Definition of Prices
• Estimation of Selling Price

Comparison

• Comparison with Wolfspeed 1200V SiC Module CAS325M12HM2
• Cree 1200V C2M vs C3M SiC MOSFETs
• Comparison with Rohm and Infineon 1200V SiC Modules

• 200V EPC2112 eGaN® HEMT with Monolithic Optimized Gate Driver
• UnitedSiC Cascode JFET 650V Family
• GaN-on-Sapphire HEMT Power IC by Power Integrations
• Infineon 600V CoolGaN Transistor Family
• Navitas 650V GaNFast Power IC Family
• SiC MOSFET Comparison 2019
• Wolfspeed CAS325M12HM2 All-SiC 1200V Power Module
• Rohm SiC MOSFET Gen3 Trench Design Family
• Discrete Power Device Packaging Comparison 2021
• GeneSiC 1200V Gen3 and 3300V Gen2 SiC MOSFETs