Follow us :

POWER GaN

Transphorm’s new die design for its TPH3206PS GaN-on-Silicon HEMT halves the cost per ampere compared to the previous model, System plus Consulting

Transphorm GaN-on-Silicon HEMT TPH3206PS

Published
29/11/2016
Product code
SP16302
Price
EUR 3 290
Applications
Industrial
Available sample Available flyer Ask for info

Transphorm’s TPH3206PS transistor has a new die design and manufacturing process. The die contacts are optimized on the die area to save space, and increase current density. The transistor metal contact and field plate structure have also been changed from the previous version. These innovations halve the cost per ampere compared to the previous model.

The TPH3206PS is a 600V EZ-GaN™ HEMT for high frequency operation from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme, which increases switching speed.

The TPH3206PS combines a normally-on GaN-on-Silicon HEMT, which withstands high voltages, and a standard low voltage MOSFET, which drives high frequency, in a cascode configuration that ultimately yields a normally-off transistor.

Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, HEMT, MOSFET and resistor.

The report also proposes a comparison with the GaN Systems GS66504B 650V HEMT. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.

Back to top

Overview/Introduction

Company Profile

TPH3206PS Characteristics

Physical Analysis

  • Synthesis of the Physical Analysis
  • Package Analysis
    • View and dimensions and marking
    • Package opening
    • Package cross-section
  • GaN on Silicon HEMT Analysis
    • Dimension and marking
    • Details and delayering
    • Cross-section, SEM view
  • Resistor Analysis
    • Dimension
    • Details and process
    • Cross- section
  • Silicon MOSFET
    • Dimension
    • Details
    • Cross-section

Manufacturing Process Flow

  • GaN HEMT Process Flow and Fabrication Units
  • Resistor Process Flow and Fabrication Units
  • MOSFET Process Flow and Fabrication Units
  • Package Process Flow

Cost Analysis

  • Synthesis of the Cost Analysis
  • Main Steps of Economic Analysis
  • Yields Explanation
  • Cost Analysis GaN HEMT
    • GaN HEMT wafer cost
    • Breakdown per process step
    • Back-end cost
    • GaN HEMT die cost
  • Resistor Cost Analysis
    • Resistor wafer cost
    • Breakdown per process step
    • Resistor die cost
  • MOSFET Cost Analysis
    • MOSFET wafer cost
    • Back-end cost
    • MOSFET die cost
  • TPH3206PS Cost Analysis
    • Assessing BOM
    • DBC cost
    • TPH3206PS module cost

Estimated Manufacturer Price Analysis

  • Manufacturers ratios
  • Estimated manufacturer price

Comparison with Transphorm TPH3002PS

Comparison with GaN System GS66504B

Back to top
© Copyright 2020 SYSTEM PLUS CONSULTING SARL l Tous droits réservés l Legacy Mentions