Lighting

Toshiba TL1L4-WH0 – LED GaN on Silicon
- Published
- 25/06/2015
- Product code
- SP15224
- Price
- EUR 6990
- Applications
Toshiba has completely changed of technology to multiply by 2 the brightness of their GaN-on-silicon LEDs. Today the Toshiba white LEDs have characteristics close to the classic sapphire LED with a smaller cost.
The large panel of products and packages available today shows the maturity of Toshiba products and their willing to conquer the white LED market.
With a footprint of 3.5×3.5mm, the TL1L4-WH0 from Toshiba is tiny and benefits of the last package innovations like the sintering and a SMD leadframe with ceramic substrate.
The TL1L4 LED are produced on a cheap 8” silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitate by a gold-free smart bonding process.
A significant work has been done on the epitaxial layer in GaN to enhance the brightness. In 18 months, the brightness has been multiplied by 2. The optimization of the GaN epitaxy is the core of this amazing improvement.
Moreover, all the manufacturing process has been enhanced to reach this brightness. Today the Toshiba white LEDs are similar to the last sapphire LEDs with a vertical thin film with via structure.
The report includes a detailed technology and a cost analysis describing the innovations of Toshiba and a comparison with the first generation Toshiba LED.
Back to topOverview / Introduction
Toshiba Company Profile
Physical Analysis
- Physical Analysis Methodology
- Package
- Physical Analysis Methodology
- Package Views & Dimensions
- Package Opening
- Package X-Ray
- Package Cross-Section
- Phosphor
- Protective diode
- LED
- LED Views & Dimensions
- Cathode
- Anode
- Epitaxy
- LED Thickness
- LED Characteristics
- Comparison TL1L4 and TL1F1
Manufacturing Process Flow
- Global Overview
- LED Fabrication Unit
- LED Process Flow
- Package Fabrication Unit
- Package Process Flow
Cost Analysis
- Synthesis of the cost analysis
- Main steps of economic analysis
- Yields Hypotheses
- Epitaxy Step
- LED Epitaxy Cost
- LED Front-End Cost
- LED Wafer Cost
- LED Cost per process step
- LED Equipment Cost per Family
- LED Material Cost per Family
- Back-End : Probe and cleaving Cost
- Packaging Cost
- Packaging Cost
- Final Assembly Cost
- Component Cost
Price Analysis
- Price definitions
- Manufacturers financial ratios
- Manufacturing Price with Binning
- Toshiba TL1F1-LW1 – LED GaN on Silicon
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