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Power Electronics

Toshiba – TK31E60W 4thgen DTMOS 600V Super-Junction MOSFET

Published
04/03/2013
Product code
SP13120
Price
EUR 6990
Applications
Sample Flyer Ask for info

The new generation Superjunction MOSFET from Toshiba has several new features.

First, the superjunction is not manufactured with a standard multi-epitaxy process but using a new deep trench filling process. This technique narrows the pitch and results in a Rds(on) that’s 30% lower. Moreover, the process simplification reduces the manufacturing cost by more than 20%.

Second, a trench gate replaces the traditional gate. The trench gate allows a greater reduction in the pitch and the Rds(on).

The DTMOS-4 MOSFET is targeted for power switching applications and offers a better power efficiency.

This report provides a reverse costing analysis of this power transistor with:

  • Detailed photos & Material analysis
  • Step-by-step manufacturing Process Flow
  • Cost breakdown by process steps
  • Final manufacturing cost
  • Selling price estimation

 

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Executive Summary

 Table of Contents

 Reverse Costing Methodology

 1. Physical Analysis

  • Physical Analysis Methodology
  • Package
  • Die Overview
  • Gate
  • Guard Ring
  • MOSFET Cell Super-Junction
  • MOSFET Cell
  • Polysilicon Gate Contact
  • Guard Ring
  • Back Side
  • MOSFET Structure
  • Deep Trench Super-Junction

2. Manufacturing Process

  • DTMOS Transistor Process Flow
  • Process Flow

 3. Manufacturing Cost

  • Wafer Fabrication Unit
  • Yields Explanation
  • MOSFET Unprobed Wafer Cost
  • Wafer Cost per Process Steps
  • Equipment Cost per Family
  • Material Cost per Family
  • Probe Test
  • Dicing and Package
  • Final Test Cost
  • Component Manufacturing Cost
  • Yields Synthesis

 4. Price Estimation

 Contacts

Glossary

 

 

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