POWER SiC

The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost. The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.

The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.

The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.

The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.

It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.

Overview / Introduction

Company Profile

STMicroelectronics

Physical Analysis

• Synthesis of the physical analysis
• Package analysis
  • Package opening
  • Package cross-section
• MOSFET die
  • MOSFET die view and dimensions
  • MOSFET die process
  • MOSFET die cross-section
  • MOSFET die process characteristic

MOSFET Manufacturing Process

• MOSFET die front-end process
• MOSFET die fabrication unit
• Final test and packaging fabrication unit

Cost Analysis

• Synthesis of the cost analysis
• Yield explanations and hypotheses
• MOSFET die
  • MOSFET front-end cost
  • MOSFET probe test, thinning and dicing
  • MOSFET wafer cost
  • MOSFET die cost
  • Wafer cost evolution
  • Die cost evolution
• Complete MOSFET
  • Assembled components cost
  • Synthesis of the assembly
  • Component cost

Price Analysis

• Estimation of selling price

Comparison

• STMicroelectronics, Cree and Rohm 1200V SiC MOSFET
• Comparison between 1200V Silicon IGBT and SiC MOSFET

Company Services

• 1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison
• SiC MOSFET Comparison 2019
• 1200V Silicon IGBT vs SiC MOSFET Comparison 2018
• Rohm SiC MOSFET Gen3 Trench Design Family
• Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics
• Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
• Industrial 100V MOSFET Technology and Cost Review
• Industrial Power Module Packaging Comparison 2020
• Nexperia’s AEC-Q101 Qualified 650 V GaN-based Power Device
• BCD Technology and Cost Comparison 2020