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Power Electronics

SPR22679_StarPower’s 1200V SiC MOSFET Power Module - Module Opening – Tilted Optical View - System Plus Consulting

StarPower’s 1200V SiC MOSFET Power Module

Published
02/02/2022
Product code
SP22679
Price
EUR 6990
Applications
Industrial
Sample Ask for info

A SiC MOSFET power module with sintered chips for industrial applications (MD300HFR120B3S).

SPR22679_StarPower’s 1200V SiC MOSFET Power Module - Module Opening – Tilted Optical View - System Plus Consulting

The market outlook for SiC devices is promising. According to Yole Développement’s CS Monitor (Q4-2021), it is expected to grow from $1B to $3.46B for the period 2021 – 2026. Nevertheless, the technical panorama of SiC devices is still diverse, and every manufacturer has its own solutions to die design and packaging integration. This leads to strong competition, which will accelerate technical innovation and lower prices. Moreover, SiC business models are still very different. We are seeing (and will continue to see) a restructuring of the supply chain driven by the main cost factors.

Since the commercialization of the first SiC device in 2001, the performance of SiC devices and the value that they add have been gradually proven. Their price has also become increasingly acceptable to end-users. StarPower, a leading power module supplier in China, provides a complete range of industry-leading power modules to customers – including SiC power modules. In this context, System Plus Consulting provides a full reverse costing study of StarPower’s 1200V SiC MOSFET Module “MD300HFR120B3S”, which targets industrial applications. This module uses sintering technology for die attach and integrates a flat baseplate.

Supported by a full teardown of the module, this report reveals StarPower’s technology choices for its assembled module as well as the designs of the different dies inside it. This report also provides insights into technology data, manufacturing cost, and the module’s selling price, as well as an estimated manufacturing cost of all the device’s parts and a selling price analysis. Included too is a physical comparison between two 1200V SiC power modules: StarPower’s MD300HFR120B3S and Rohm’s BSM180D12P3C007.

StarPower’s 1200V SiC MOSFET Power Module - Module Cross-Section – SEM View - System Plus Consulting StarPower’s 1200V SiC MOSFET Power Module - Die Cross-Section – SEM View - System Plus Consulting StarPower’s 1200V SiC MOSFET Power Module - Module Cross-Section – Optical View - System Plus Consulting
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Overview / Introduction

  • Executive Summary
  • Market
  • Reverse Costing Methodology
  • Glossary

Company Profile

  • StarPower Company Profile
  • StarPower Product Catalog
  • Module Datasheet

Physical Analysis

  • Synthesis of the Physical Analysis
  • Package Analysis
    • Package Views & Dimensions
    • Package Opening
    • Package Cross-Section
  • SiC MOSFET Die
    • SiC MOSFET Die View & Dimensions
    • SiC MOSFET Die Process
    • SiC MOSFET Die Cross-Section
  • Passive Die
    • Passive Die View & Dimensions
    • Passive Die Process
    • Passive Die Cross-Section

Physical Comparison

  • StarPower vs. Rohm – 1200V SiC Power Modules

Manufacturing Process 

  • SiC MOSFET Fabrication Unit
  • SiC MOSFET Process Flow
  • Passive Die Fabrication Unit
  • Passive Die Process Flow
  • Final Test & Packaging Fabrication Unit
  • Packaging Process Flow

Cost Analysis

  • Synthesis of the Cost Analysis
  • Yields Explanation & Hypotheses
  • SiC MOSFET
    • SiC MOSFET Front-End Cost
    • SiC MOSFET Wafer Cost per Process Step
    • SiC MOSFET Die Probe Test & Dicing
    • SiC MOSFET Die Cost
  • Passive Die
    • Front-End Cost
    • Wafer Cost per Process Step
    • Die Probe Test & Dicing
    • Die Cost
  • DBC Cost
    • DBC BOM Cost & Assembly Cost
  • Module Cost
    • Packaging BOM & Assembly Cost
    • Module Final Cost

Selling Price Analysis

Estimation of Selling Price

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