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Compound Semiconductors And Emerging Substrates

SP20536-Dies top view – Optical View

SiC Diode Comparison 2020

Product code
EUR 6990
Mobile & Consumer
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Comparison of the technology and cost of 11 SiC diodes from Infineon, Wolfspeed, Rohm, STMicroelectronics, ON Semiconductor, Microsemi, and UnitedSiC.

SP20536-Package Opening – Tilted Optical View

SiC devices are gaining the confidence of many customers and are penetrating various applications. This is confirmed by the promising market outlook for SiC devices, whose compound annual growth rate (CAGR) will be 31% for the period 2019-2025 according to Yole Développement.

Since their first commercialization in 2001, the performance and added value of SiC diodes has been gradually proven and their price has become increasingly acceptable to end users. In this report, System Plus Consulting presents an overview of the state of the art of SiC diodes to highlight differences in design and manufacturing processes, and their impact on device size and production cost. It gives a benchmark overview of the different SiC diodes available on the market and analyzes 11 of them from seven of the main SiC diode suppliers.

The 11 SiC diodes are spread across three voltage classes: 650V, 1200V, and 1700V. Devices from Infineon, Wolfspeed, Rohm, STMicroelectronics, ON Semiconductor, Microsemi, and UnitedSiC have been analyzed. They target different power applications, including two AEC-Q101 qualified SiC diodes.

The report provides detailed optical and SEM pictures with some EDX material analysis, from device packaging to the microscopic level of diode design, with a focus on the latter. This report estimates the manufacturing cost of the analyzed SiC diodes and their selling prices. It provides physical, technological and manufacturing cost comparisons between the analyzed diodes.

SP20536-Dies top view – Optical View SP20536-Die Delayering – Top SEM View SP20536-Die Cross-Section – SEM View
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  • Executive Summary, Reverse Costing Methodology and Glossary

Technology & Market

  • Wide Band Gap Market Segmentation as a Function of Voltage Range, SiC Diode Bare Die Market Share Split by Voltage, Identified SiC Discrete Diodes in the Market and Main Player Roadmap
  • SiC Challenges and SiC Diodes Device Design Technology Choices

Company Profile and Supply Chain

  • Infineon, Wolfspeed, Rohm, STMicroelectronics, ON Semiconductor, Microsemi, UnitedSiC: Profile and Supply Chain

Physical Analysis

  • Summary
  • 650V SiC Diodes
    • Infineon IDH06G65C6
    • Wolfspeed C6D04065A
    • Rohm SCS308AH
    • STMicroelectronic STPSC6H065D
    • ON Semiconductor FFSP0465A
    • UnitedSiC UJ3D06506TS
  • 1200V SiC Diodes
    • Infineon IDK05G120C5
    • Rohm SCS205KGHR
    • ON Semiconductor FFSP05120A
  • 700V SiC Diodes
    • Wolfspeed  C5D10170H
    • Microsemi  MSC010SDA170B

Technology and Physical Comparison

  • Die Design: Physical and Technology Comparison
  • Performance Comparison: FOM (Qc*Vf) and Current Density

Manufacturing Process Flow

  • Supply Chain
  • For Each Analyzed SiC Diode:
    • Description of the wafer fabrication unit and process flow
    • Description of the package assembly unit

Cost Analysis

  • Summary
  • Yield Explanations and Hypotheses
  • For Each Analyzed SiC Diode:
    • Wafer cost
    • Die cost
    • Packaging cost
    • Component cost
    • Component price

Cost Comparison

  • Overall Comparison – Component Cost
  • Overall Comparison – Wafer FE Cost and Die Ampere Cost Per Area
  • 650V, 1200V, 1700V SiC Diode Wafer and Ampere Cost Comparison
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