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Samsung 16Gb LPDDR5 1z DRAM Memory -Samsung LPDDR5 Die Cross Section - System Plus Consulting

Samsung 16Gb LPDDR5 1z DRAM Memory

Product code
EUR 6990
Mobile & Consumer
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Analysis of Samsung’s 16Gb low-power DRAM memory using 10nm-class technology (1z generation).

Samsung 16Gb LPDDR5 1z DRAM Memory -Samsung LPDDR5 Die Cross Section - System Plus Consulting

DRAM revenue is estimated to grow by 43% in 2021, owing to an increase in DRAM prices. Moreover, the price of DRAM memory is expected to increase by 16.2% in 2021 compared to 2020. Samsung Electronics, the world leader in advanced memory technology, dominated the DRAM market with a 44% share in Q3 2021.

Samsung’s highest-density (Gb/die) LPDDR5 memory die, with a capacity of 16Gb and built on Samsung’s third-generation 10nm-class (1z) process, is analyzed in this report. Samsung is the first DRAM manufacturer to use EUV in DRAM memory manufacturing.  EUV technology reduces some difficulties associated with DRAM cell scaling. EUV lithography eliminates multiple patterning in the manufacturing process, resulting in reduced manufacturing time and improved and accurate patterning. Also, high yields and higher-volume manufacturing are experienced when EUV lithography is applied.

The 1z LPDDR5 memory has up to 20% power reduction for improved device battery life, and it is 1.5x faster than the previous LPDDR4X. Samsung’s K3LK7K7OBM LPDDR5 16Gb memory dies use a thin silicon substrate – only four dies are integrated in the 8GB package.  The 1z generation produces 15% more memory capacity per 300mm wafer, compared to Samsung’s 1y LPDDR5 generation. Furthermore, 1z technology allows Samsung to increase its manufacturing productivity. It is estimated that Samsung’s DRAM memory using 1z process node will be its predominant node in 2022 and 2023.

This report analyzes the Samsung K3LK7K7OBM LPDDR5 memory used in today’s flagship mobile devices, including the SAMSUNG Galaxy S21 5G, OnePlus 9 Pro 5G, and SAMSUNG Galaxy S21+ 5G(international version). Details on package teardown include the package X-ray and cross-section, which reveals the die placement and package opening. Also included in this report is a full analysis of the die, accompanied by optical and high-resolution SEM images of the memory die cross-section that identifies the die process. The die cross-section reveals the CMOS region, the capacitors, and the metal layers.  Also furnished is the manufacturing process of the DRAM memory and the DRAM cost analysis. Finally, this report briefly compares Samsung’s 1y 12Gb LPDDR5 to Samsung’s 1z 16Gb LPDRR5.

Samsung 16Gb LPDDR5 1z DRAM Memory - Samsung Die Delayering – Capacitor top View - System Plus Consulting Samsung 16Gb LPDDR5 1z DRAM Memory - Samsung Die Delayering – Bitline and CMOS top view - System Plus Consulting Samsung 16Gb LPDDR5 1z DRAM Memory - Samsung Memory Word lines and Bit lines - System Plus Consulting
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Overview / Introduction           

  • Executive Summary
  • Reverse Costing Methodology

Company Profile   

  • Samsung Financial Results
  • Samsung Products

Market Analysis

  • DRAM Revenue
  • DRAM Shipments
  • DRAM Market Pricing

Physical Analysis   

  • Summary of the Physical Analysis
  • Smartphone Disassembly
  • Package Views & Dimensions
  • Package Cross-Section
  • Package Opening
  • Die View & Dimensions
  • Die Cross-Section
  • Die Delayering & Process

Comparison of 1z LPDDR5 vs. 1y LPDDR5        

  • Package Comparison
  • Die Comparison
  • Die Cross-Section Comparison

Memory Manufacturing Process  

  • Memory Front-End Process
  • Memory Fabrication Unit
  • Final Test
  • Summary of the Main Parts

Cost Analysis      

  • Summary of the Cost Analysis
  • Yields Explanation & Hypotheses
  • Memory Die
  • Memory Front-End Cost
  • Memory Probe Test, Thinning & Dicing
  • Memory Wafer Cost
  • Memory Die Cost
  • Complete Cost

Selling Price      

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