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Samsung 128-layer V-NAND Memory

Product code
EUR 6990
Mobile & Consumer
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Samsung’s 6th-generation 3D NAND TLC with 128 active wordlines in a single deck array with side peripheral logic.

Samsung is a giant in the NAND market, dominating for several years. In 2020, the company was the world’s top NAND flash maker with a market share of 34%, followed by Japan’s Kioxia Corp. with 21% and U.S. chipmaker Western Digital Corp. with 18%.

There is an explosive worldwide growth of data production causing the demand for high-performing, reliable non-volatile memory. NAND memory providers are continuously pushing the limits of 3D stacking to provide improved storage density with each generation of 3D NAND memories.

Samsung’s vertical-NAND flash technology satisfies rising data demands by increasing the number of stacked layers. Vertical stacking of memory cells or wordlines creates a three-dimensional structure which overcomes the capacity limitations. Samsung first commercialized its 24-layered V-NAND in 2013 and today has reached 128 layers in its 6th-generation V-NAND.  This 6th-generation design stacks a total of 136-layer wordlines in a single tier. Meanwhile, NAND memory competitors are using a double-stack technology to develop their 3D NAND stacked memories, yet Samsung sticks to using a single stack which requires a more advanced etching technique and results in an increased high-aspect ratio.  The company’s sixth-generation V-NAND adds almost 40% more cells to the previous 92-layer 5th-generation V-NAND, resulting in an almost 25% chip area reduction.

This report presents a detailed study of Samsung’s latest 128-layer V-NAND using charge trap flash and triple-level cell NAND memory cells. The high-quality optical images and high-resolution scanning electron microscope (SEM) images are extracted to give physical details of the package and die cross-sections, including material identification. Also included are process details to better understand the major fabrication steps. Additionally, this report provides a cost estimation for producing the memory wafer with multiple wordlines, the die cost, and the packaging cost.

Finally, this report features a comparison of Samsung’s previous-generation memories: this includes Gen 4 with 64 layers, Gen 5 with 92 layers, and Gen 6 with 128 layers. This comparison summary comprises the package and die physical comparison, die density, wafer cost, and die cost. It also identifies the similar physical features and the evolution of Samsung’s V-NAND with each generation.

Samsung 128-layer V-NAND Memory - Die NAND Strings – Top View - System Plus Consulting Samsung 128-layer V-NAND Memory - CMOS Transistors - System Plus Consulting Samsung 128-layer V-NAND Memory - SPR21584 - Samsung 128-layer V-NAND Memory - - System Plus Consulting - System Plus Consulting
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  • Executive Summary
  • Reverse Costing Methodology

Company Profile

  • Samsung Financials
  • Samsung Products
  • Samsung Location
  • Samsung 3D NAND Memory

Physical Analysis

  • Samsung 980 PRO SSD Overview
  • Samsung 980 PRO SSD Teardown
  • Memory Package
  • Memory Package View & Dimensions
  • Memory Package Cross-Section
  • Memory Package Opening
  • Memory Die
  • Memory Die View & Dimensions
  • Memory Die Cross-Section
  • Memory Die Delayering
  • Patents

Comparison 64-layer, 92-layer, 128-layer

  • Memory Package
  • Memory Die Area and Density
  • Memory Die Cross-Section
  • Memory CMOS Transistors
  • Memory Cost

Memory Manufacturing Process

  • Memory Die Front-End Process
  • Memory Die Fabrication Unit
  • Memory Manufacturing Process
  • Packaging & Final Test

Cost Analysis

  • Yields & Hypothesis
  • Memory Die Front-End Cost
  • Memory Die Probe Test, Thinning & Dicing
  • Memory Die Wafer Cost
  • Memory Die Cost
  • Memory Packaging Cost
  • Memory Component Cost
  • Memory Cost per Gb

Selling Price

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