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POWER SiC

Rohm new 1200V MOSFET module, first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio - System Plus Consulting

ROHM 1200V Trench SiC MOSFET

Published
06/07/2016
Product code
SP16275
Price
EUR 3 490
Applications
Available sample Available flyer Ask for info

The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters,  photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure  halves on-resistance and reduces switching losses by 42%.

The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.

The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.

The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.

It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.

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Overview/Introduction

  • Executive Summary
  • Reverse Costing Methodology

Company Profile

Physical Analysis

  • Synthesis of the Physical Analysis
  • Package Analysis
    • View, dimensions and marking
    • Housing
    • Base plate cross-section
    • DBC cross-section
  • MOSFET Analysis
    • Dimension
    • Die process
    • Die cross-section
  • SBD Diode Analysis
    • Dimension
    • Die process
    • Die cross-section
  • Comparison between Rohm’s planar and trench MOSFETs

Manufacturing Process Flow

  • Overview
  • MOSFET and Diode Process Flow
  • Package Process Flow
  • Description of Wafer Fabrication Units

Cost Analysis

  • Synthesis of the Cost Analysis
  • Main Steps of Economic Analysis
  • Yields Explanation
  • MOSFET Cost Analysis
    • Wafer cost hypothesis
    • MOSFET wafer cost
    • Breakdown by process step
    • MOSFET probe cost
    • MOSFET die cost
  • Cost Analysis Diode
  • Cost Analysis BSM180D12P3C007
    • Assessing BOM
    • DBC cost
    • BSM180D12P3C007 module cost

Comparison between BSM180D12P3C007 and  CAS120M12BM2

  • Module
  • MOSFET
  • Diode
  • Cost

Estimated Manufacturer Price Analysis

  • Manufacturers’ ratios
  • Estimated manufacturer price
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