RF Devices And Technology

Qorvo QM76018 RFFEM in the Apple iPhone Xr
- Published
- 09/10/2019
- Product code
- SP19478
- Price
- EUR 6990
- Applications
- Mobile & Consumer
First mid/high-band front-end module from Qorvo in an Apple phone with advanced packaging.
Every year, Apple adopts innovative technology in the radio-frequency (RF) area. In its 2018 mid-range flagship, the iPhone Xr, the company used the latest and most advanced filter and packaging technology, dual sourcing from Broadcom, formerly Avago Technologies, and Qorvo. This latest Front-End Module (FEM) is the first High/Mid-Band Power Amplifier Module with integrated Duplexer (HB/MB PAMiD) from Qorvo to be integrated in an Apple phone. The module includes a flip-chip power amplifier on a GaAs substrate and advanced Electro-Magnetic Interference (EMI) shielding, allowing frequency band isolation in the same System-in-Package (SiP).
In 2018, Qorvo supplied the Xr version of the iPhone with a module that is pin-to-pin compatible with the Broadcom AFEM-8092, the QM76018. Like the AFEM-8092, the QM78016 is a Mid/High-Band Long Term Evolution (LTE) FEM. As usual, it features several dies: Power Amplifier, Silicon-on-Insulator (SOI) Switch, Filters and Power Management Integrated Circuit (PMIC). The Filters still use Qorvo’s Copper Flip technology with a polymer cavity enabling thermal dissipation. For the first time, the Bulk Acoustic Wave (BAW) filters are using Scandium Doped Aluminum Nitride (AlScN) as a piezoelectric material and integrate passive capacitor devices on the die.
For this special version, Qorvo has integrated the same advanced features as Broadcom. The first is a Low Noise Amplifier (LNA) on a SOI substrate. The second is EMI micro shielding inside the PCB substrate to reduce interference between the dies. Thanks to all these innovations, Qorvo is able to supply a similar device to Broadcom’s in terms of performance, but also a cost-effective component with a very low number of input/output (I/O) connections.
In this report, we analyze the complete FEM SiP, including a complete analysis of the LNA, the filtering dies, the internal and external EMI shielding and the Power Amplifier. The report also features a cost analysis and a price estimation of the component. Finally, it also integrates a physical and cost comparison of the AFEM-8092 Mid/High band LTE FEM also used in the Apple iPhone Xr.
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Overview/Introduction
Qorvo Company Profile
Apple iPhone Xr – Teardown
Market Analysis
Physical Analysis
- Physical Analysis Methodology
- Package
- Views and dimensions
- Package opening: Power amplifier, switch, RF IC, filters
- Package Cross-section: Overview, Dimensions, Substrate, Shielding
- Package Physical Data Summary
- Power Amplifier, Switch Die
- Views, dimensions, and markings
- Die overview and cross-section
- LNA Die
- Views, dimensions, and markings
- Die overview and delayering
- Die process and die cross-section
- Filter Dies
- Views, Dimensions, Opening and Markings
- Die Overview: Copper Pillars, Substrate, Cells, passives
- Die Cross-Section: Capping, passives, SMR Structure
- Filter Physical Data Summary
Manufacturing Process Flow
- Die Process
- Die Wafer Fabrication Unit
- Die Process Flow
- Packaging Process Flow
Cost analysis
- Cost Analysis Overview
- Main Steps Used in the Economic Analysis
- Yield Hypotheses
- Filter Die Cost
- Front-end (FE) cost
- Filter wafer front-end cost by process Step
- Wafer and die cost
- LNA Die Cost
- Front-end (FE) cost
- Wafer and die cost
- Packaging Cost
- Module Cost
Estimated Price Analysis
Comparison with Broadcom AFEM8092
Package View and Dimensions
- Power Amplifier
- FBAR vs. SMR
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