RF Devices And Technology

Qorvo QM76018 RFFEM in the Apple iPhone Xr

Published: 09/10/2019
Product code: SP19478
Price: EUR 3 990
Applications: Mobile & Consumer

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Introduction
Summary
Similar reports

First mid/high-band front-end module from Qorvo in an Apple phone with advanced packaging.

Every year, Apple adopts innovative technology in the radio-frequency (RF) area. In its 2018 mid-range flagship, the iPhone Xr, the company used the latest and most advanced filter and packaging technology, dual sourcing from Broadcom, formerly Avago Technologies, and Qorvo. This latest Front-End Module (FEM) is the first High/Mid-Band Power Amplifier Module with integrated Duplexer (HB/MB PAMiD) from Qorvo to be integrated in an Apple phone. The module includes a flip-chip power amplifier on a GaAs substrate and advanced Electro-Magnetic Interference (EMI) shielding, allowing frequency band isolation in the same System-in-Package (SiP).

In 2018, Qorvo supplied the Xr version of the iPhone with a module that is pin-to-pin compatible with the Broadcom AFEM-8092, the QM76018. Like the AFEM-8092, the QM78016 is a Mid/High-Band Long Term Evolution (LTE) FEM. As usual, it features several dies: Power Amplifier, Silicon-on-Insulator (SOI) Switch, Filters and Power Management Integrated Circuit (PMIC). The Filters still use Qorvo’s Copper Flip technology with a polymer cavity enabling thermal dissipation. For the first time, the Bulk Acoustic Wave (BAW) filters are using Scandium Doped Aluminum Nitride (AlScN) as a piezoelectric material and integrate passive capacitor devices on the die.

For this special version, Qorvo has integrated the same advanced features as Broadcom. The first is a Low Noise Amplifier (LNA) on a SOI substrate. The second is EMI micro shielding inside the PCB substrate to reduce interference between the dies. Thanks to all these innovations, Qorvo is able to supply a similar device to Broadcom’s in terms of performance, but also a cost-effective component with a very low number of input/output (I/O) connections.

In this report, we analyze the complete FEM SiP, including a complete analysis of the LNA, the filtering dies, the internal and external EMI shielding and the Power Amplifier. The report also features a cost analysis and a price estimation of the component. Finally, it also integrates a physical and cost comparison of the AFEM-8092 Mid/High band LTE FEM also used in the Apple iPhone Xr.

Overview/Introduction

Qorvo Company Profile

Apple iPhone Xr – Teardown

Market Analysis

Physical Analysis

Physical Analysis Methodology
Package
- Views and dimensions
- Package opening: Power amplifier, switch, RF IC, filters
- Package Cross-section: Overview, Dimensions, Substrate, Shielding
- Package Physical Data Summary
Power Amplifier, Switch Die
- Views, dimensions, and markings
- Die overview and cross-section
LNA Die
Views, dimensions, and markings
Die overview and delayering
Die process and die cross-section
Filter Dies
- Views, Dimensions, Opening and Markings
- Die Overview: Copper Pillars, Substrate, Cells, passives
- Die Cross-Section: Capping, passives, SMR Structure
Filter Physical Data Summary

Manufacturing Process Flow

Die Process
Die Wafer Fabrication Unit
Die Process Flow
Packaging Process Flow

Cost analysis

Cost Analysis Overview
Main Steps Used in the Economic Analysis
Yield Hypotheses
Filter Die Cost
- Front-end (FE) cost
- Filter wafer front-end cost by process Step
- Wafer and die cost
LNA Die Cost
- Front-end (FE) cost
- Wafer and die cost
Packaging Cost
Module Cost

Estimated Price Analysis

Comparison with Broadcom AFEM8092

Package View and Dimensions

Power Amplifier
FBAR vs. SMR