POWER

A cost-oriented overview of evolutionary trends in power discrete packages, from mW to kW.

     

The most recent market forecast by Yole Développement shows the global rise of power devices. The market for discrete devices will follow that trend, increasing in value by an estimated $1.5 billion in the next five years.

In recent years the packaging market industry has stabilized around some standard formats and footprints. But the race for optimization is far from over.

The electric and hybrid electric vehicle markets are evolving fast, as are other aspects of electrification of transportation. This, and more generally the power electronic market’s growth, has induced competition between component manufacturers.

In the race to innovation and efficiency, the semiconductor die itself isn’t the only key to success. In fact, when chasing after the optimum configuration for electrical, thermal and mechanical performance, manufacturers also must battle with the mechanical reliability and cost of packaging. More than a simple “shell”, the packaging surrounding the dies can make or break a design.

To satisfy an industry where standardization and ‘return on experience’ are key elements of success, seemingly small but smart tweaks around common packages can turn out to be highly differentiating.

Through physical analyses, including chemical opening, cross-sections, and various measurements, this report tries to summarize the state of the art of packaging power semiconductors at a discrete level. With a cost-oriented viewpoint, we reveal the hidden details that make the difference between over 20 types of packages, ranging from mW to kW designs.

Overview/Introduction

• Executive Summary
• Reverse Costing Methodology
• Devices Analyzed

Introduction

• Discrete Market

Physical Analysis

• 3×1.3mm²
  • SOT23

• 3×1.6mm²
  • TSOP6

• 3x3mm²
  • SON3x3
  • TSMT8

• 4.5×2.5mm²
  • SOT89
  • SOIC-8

• 5x6mm²
  • PowerFLAT 5×6
  • PowerFLAT 5×6 double island
  • PowerFLAT 5×6 dual side cooling
  • SOP advance

• 10x10mm²
  • D2PAK7
  • H2PAK
  • PSOFA-008
  • TO-220

• 15x20mm²
  • TO-247

Manufacturing process flow

Cost Simulation

Comparison

• 1200V Silicon IGBT vs SiC MOSFET Comparison 2018
• Infineon FS820R08A6P2B HybridPACK Drive IGBT Module
• SiC MOSFET Comparison 2019
• Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends
• Mitsubishi J1- Series 650V High-Power Modules for Automotive
• GaN Systems GS61004B GaN HEMT
• Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
• 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon
• Wolfspeed C2M 1200V SiC MOSFET C2M0025120D
• EPC2045 100V GaN-on-Silicon Transistor