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Panasonic 600V GaN HEMT PGA26E19BA uses a DFN 8x8 package for its normally-off GaN HEMT structure - System Plus Consulting

Panasonic 600V GaN HEMT PGA26E19BA

Published
23/05/2017
Product code
SP17322
Price
EUR 3 290
Applications
Consumer Industrial
Available sample Available flyer Ask for info

System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a Dual Flat No-lead (DFN) 8×8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.

The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component. The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.

The GaN and AlGaN layers are deposited by epitaxy onto a silicon substrate. A complex buffer and template layer structure is used to reduce the stress and dislocation levels.

Based on a complete teardown analysis, the report provides an estimation of the production cost of the epitaxy, HEMT and package. Moreover, the report compares the new device with GaN Systems’ GS66504B and Transphorm’s GaN HEMT. This comparison highlights the huge differences in design and manufacturing processes and their impact on device size and production cost.

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Overview / Introduction

  • Executive Summary
  • Reverse Costing Methodology

Company Profile

  • Panasonic

Physical Analysis

  • Overview of the Physical Analysis
  • Package Analysis
    • Package opening
    • Package cross-section
  • HEMT Die
    • HEMT die view and dimensions
    • HEMT die process
    • HEMT die cross-section
    • HEMT die process characteristics

HEMT Manufacturing Process

  • HEMT Die Front-End Process
  • HEMT Die Fabrication Unit
  • Final Test and Packaging Fabrication Unit

Cost Analysis

  • Overview of the Cost Analysis
  • Yield Explanations and Hypotheses
  • HEMT Die
    • HEMT die front-end cost
    • HEMT die probe test, thinning and dicing
    • HEMT wafer cost
    • HEMT die cost
  • Complete HEMT
    • Packaging cost
    • Final test cost
    • Component cost

Price Analysis

  • Estimation of Selling Price

Comparison

  • Comparison Between Panasonic HEMTs
  • Comparison Between Panasonic, Transphorm and GaN Systems HEMTs
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