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Compound Semiconductors And Emerging Substrates

NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure_NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure - System Plus Consulting

NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure

Published
18/01/2022
Product code
SPR22660
Price
EUR 6990
Applications
Telecom & Infrastructure
Sample Ask for info

14W-Average Asymmetrical Doherty RF Power GaN-on-SiC (A3G35H100-04S).

NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure_NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure - System Plus Consulting

The GaN RF device market is expected to reach over US$2.4 billion by 2026 according to Yole Développement, and major actors are expanding their capacity to respond to this growing market demand. NXP is ranked #5 among GaN RF players, with a market share of 4.6% in 2020 according to Yole Développement (source: Yole GaN RF report 2021). Formerly fabless, NXP is expected to increase its GaN revenue following its 6-inch GaN-on-SiC fab opening in Chandler, AZ in 2020.

Launched more than 20 years ago, GaN-on-SiC is now a serious rival to LDMOS and GaAs in RF power applications. Owing to their high bandwidth and efficiency, GaN-on-SiC devices keep taking share from LDMOS in the 5G market and are starting to benefit from a 6-inch wafer platform transition.

In this dynamic context, System Plus Consulting provides a full reverse costing study of NXP’s RF Power GaN A3G35H100-04S. It is an asymmetrical Doherty RF power GaN for cellular base station applications with GaN-on-SiC HEMT in a discrete ceramic package. It operates from 3.4 to 3.6 GHz and can deliver an average power of 14W in a Doherty configuration.

Supported by a full teardown of the device, this report reveals NXP’s technology choices for its assembled device as well as the designs of the different dies inside it.

This report also provides insights into technology data, manufacturing cost, and selling price of the device, as well as an estimated manufacturing cost of all the device’s parts and a selling price analysis.

Included too is a comparison between two analyzed RF power GaN: A3G35H100-04S from NXP and QPD0011 from Qorvo (Qorvo’s device is analyzed in a separate dedicated reverse costing report). These comparisons highlight differences in the technology and costs.

Lastly, this report furnishes a market forecast of packaged GaN RF devices by technology platform.

NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure_Die Cross-Section – SEM View - System Plus Consulting NXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure_Die Topside – Optical View - System Plus ConsultingNXP RF Power GaN 3.5 GHz for 5G Telecom Infrastructure_Package Cross-Section – Optical View - System Plus Consulting
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Overview / Introduction

  • Executive Summary
  • Datasheet
  • Reverse Costing Methodology

Company Profile

Packaged GaN RF Device Market Forecast ($M) – Split by Technology Platform

Physical Analysis         

  • Package Analysis
    • Package Opening
    • Package Cross-Section
  • Dies Analysis: Views, Dimensions, and Cross-Section
    • Big GaN-on-SiC Transistor
    • Small GaN-on-SiC Transistor
    • Big Capacitor
    • Small Capacitor

Physical Comparison

Manufacturing Process 

  • Dies Overview
  • Wafer Fabrication Unit
  • Packaging Fabrication Unit

Cost Analysis

  • Main Steps of Economic Analysis
  • Yields Explanation
  • Yields Hypotheses
  • GaN-on-SiC Wafer & Die Cost
    • GaN-on-SiC Wafer Front-End Cost
    • GaN-on-SiC Wafer Cost per Process Steps
    • GaN-on-SiC Die Cost
  • Big & Small Capacitor Wafer & Die Cost
    • Wafer Front-End Cost
    • Wafer Cost per Process Steps
    • Die Cost
  • Assembly & Test Cost
    • Component Assembly Cost
    • Component Final Cost

Cost Comparison

Estimation Of Selling Price

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