Compound Semiconductors And Emerging Substrates

Littelfuse and Monolith Semiconductors, in collaboration with X-Fab, have released a 1st-generation, high-reliability MOSFET with the hope of making this  silicon carbide product mainstream.

The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 – 2020. This will increase to 40% from 2020 – 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1B in 2022. In the energy conversion sector, SiC devices have an actual value of $250M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.

Littelfuse, Inc., a leader in circuit protection, recently introduced its first series of silicon carbide (SiC) MOSFETs. This is the latest addition to the company’s power semiconductor line, realized through a majority investment in Monolith Semiconductor Inc., a SiC technology development company.

The LSIC1MO120E0080, with a voltage rating of 1200V and ultra-low (80mΩ) on-resistance, is the first organically designed, developed, and manufactured SiC MOSFET to be released by this partnership, using all of X-Fab’s know-how and experience, along with  its 150mm SiC production line in Lubbock.

Supported by a full component and package teardown, this report reveals Littelfuse’s innovative assets, which bring several advantages to the 1200V SiC MOSFET: most notably, superior gate-oxide reliability, switching performance, and conduction losses.

This report also details the complete bill of materials (BoM), die manufacturing, and packaging processes. Included too are an estimated manufacturing cost, a comparison with similar products from STMicroelectronics and CREE, and an estimated sales price of the Littelfuse component.

Overview/Introduction

• Executive Summary
• Reverse Costing Methodology

Company Profile

• Littelfuse Semiconductor

Physical Analysis

• Synthesis of the Physical Analysi
• Package Analysis
  • Package opening
  • Package cross-section
• MOSFET Die
  • MOSFET die – view and dimensions
  • MOSFET – die process
  • MOSFET – die cross-section
  • MOSFET – die process characteristics

MOSFET Manufacturing Process

• MOSFET Die – Front-End Process
• MOSFET Die – Fabrication Unit
• Final Test and Packaging – Fabrication Unit

Cost Analysis

• Synthesis of the Cost Analysis
• Yields Explanation and Hypotheses
• MOSFET Die
  • MOSFET – front-end cost
  • MOSFET – die probe test, thinning and dicing
  • MOSFET – wafer cost
  • MOSFET – die cost
• Complete MOSFET
  • Assembled components cost
  • Synthesis of the assembly
  • Component cost

Price Analysis

• Estimated Sales Price

Comparison

• 1200V CREE and STMicroelectronic SiC MOSFET Comparison
• SiC vs IGBT Comparison

• Discrete Power Device Packaging Comparison 2021
• BCD Technology and Cost Comparison 2021
• GaN Systems GS61004B GaN HEMT
• EPC2045 100V GaN-on-Silicon Transistor
• SiC Transistor Comparison 2021
• EPC2152 Half Bridge Monolithic GaN IC
• Silicon IGBT Comparison 2021
• STMicroelectronics MASTERGAN1 Half-Bridge Driver
• SiC Transistor Comparison 2020
• GaN Power Transistor Comparison 2020