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Compound Semiconductors And Emerging Substrates

SP20563-Die overview

Innoscience’s 650V GaN-on-Si Transistor

Product code
EUR 3990
Mobile & Consumer
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The first 100% Chinese GaN-on-Si power device found in Rock’s fast charger, manufactured on an 8-inch platform.

SP20563-Die cross-section

The Power GaN market is expected to reach $700M in 2025, up from $24M in 2019, driven by consumer applications, according to Yole Développement. Innoscience is a new entrant in the GaN-on-Silicon transistor market, with its world-first 8-inch wafer production line. Upgrading from the 6-inch to 8-inch platform has a direct effect on improving costs of GaN-on-Silicon device.

In this report, System Plus Consulting offers a complete reverse costing of a 650V GaN FET from Innoscience, which is found in the latest Rock 65W fast charger. For normally-off operation, Innoscience uses enhancement mode (E-mode) with a p-doped GaN cap layer under the gate.  The device is assembled in a dual-flat no-leads 8×8 package for easy integration into power electronic systems.

System Plus Consulting presents a deep teardown analysis of the GaN device. Detailed optical and scanning electron microscope pictures and cross-sections with energy-dispersive X-ray analysis are included to reveal Innoscience’s technical choices from the device design to the packaging.

The report estimates the production costs of the GaN HEMT and the package, and the price of the component. Finally, the report includes a comparison with a 650V E-mode GaN-on-Silicon HEMT from Navitas. This comparison highlights the differences in power device designs and manufacturing costs.

SP20563-Die overview SP20563-Package overview SP20563-Gate contact
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  • Executive Summary
  • Market Overview
  • Reverse Costing Methodology

Company Profile

  • Innoscience

Physical Analysis

  • Summary and Overview
  • Package
  • Die Delayering
  • Die Cross-Section

Manufacturing Process Flow

  • Fab Units
  • HEMT Process Flow
  • Component Packaging

Cost Analysis

  • Economic Analysis and Yields
  • GaN HEMT Cost
    • HEMT wafer front-end cost and front-end cost per process step
    • HEMT back-end 0 cost: Die probe test, thinning and dicing
    • HEMT die cost
  • Packaging Cost
  • Component Cost
    • Back-end: Final test cost
    • Component cost

Selling Price

  • Component price


  • Technology and Cost Comparison Between Innoscience and Navitas GaN Power Devices
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