POWER IGBT

The first PrimePACK™ 2 product from Infineon implementing IGBT5 and .XT joining technology with copper wire bonding and sintered silver die attach.

The market outlook for the power electronics industry is promising. In 2018, the power semiconductor device market segment was worth US$17.5 billion, with a forecast compound annual growth rate (CAGR) for the 2018-2024 period of 3.2%.

The biggest growth is set to be driven by IGBT modules, which represent 23% of the total market in 2018 and is expected to increase in coming years. That’s why various players are currently investing in new manufacturing lines. Infineon has invested US$1.9 billion in Villach to build a second fab for power devices on 300mm wafers.

Industrial applications are one of the main appealing markets for IGBT modules. For this purpose, Infineon released the FF1200R12IE5, which is its first PrimePACK™ 2 product with IGBT5 and .XT joining technology. This novel joining technology implements copper wire bonding and sintered silver as a die attach layer.
The module employs Infineon’s IGBT5 TRENCHSTOP™ and Emitter Controlled 5 diode in 1200V Half-Bridge configuration with a nominal current rating of 1200 A.

This report presents a deep analysis of the FF1200R12IE5 module. Supported by a full teardown of the module’s components and housing, this report reveals Infineon’s design of the IGBT5 and EC5 diode as well as its innovative assets in the PrimePACK™ 2 packaging.

This report includes an estimated manufacturing cost of all the module’s components and a selling price analysis. It also offers a comparison between IGBT3, IGBT4 and IGBT5 technologies from Infineon.
These comparisons highlight differences in the die design, packaging, electrical performances, and manufacturing costs.

Overview/Introduction

• Executive Summary
• Market, Reverse Costing Methodology, and Glossary

Company Profile

• Infineon profile, Technology, Product Portfolio and Supply Chain

Physical Analysis

• Summary of the Physical Analysis
• Package Analysis
  • Package opening
  • Package cross-section
• Si IGBT Die
  • IGBT die view and dimensions
  • IGBT die process
  • IGBT die cross-section
• Si Diode Die
  • Diode die view and dimensions
  • Diode die process
  • Diode die cross-section

Manufacturing Process

• Si IGBT Fabrication Unit
• Si IGBT Process Flow
• Si Diode Fabrication Unit
• Si Diode Process Flow
• Final Test and Packaging Fabrication unit
• Packaging Process Flow

Cost Analysis

• Synthesis of the Cost Analysis
• Yield Explanations and Hypotheses
• Si IGBT and Si Diode
  • Front-end cost
  • Wafer cost per process step
  • Die probe test and dicing
  • Die cost
• DBC Cost
  • DBC BOM cost and assembly cost
• Module Cost
  • Module BOM cost and packaging assembly cost
  • Final module cost

Selling Price Analysis

• Definition of Prices
• Estimation of Selling Price

Comparison

• Comparison of Infineon IGBT3 vs IGBT4 vs IGBT5

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