POWER IGBT

With the push from various energy-saving applications, the overall IGBT market was worth USD860 Million in 2016. 25 million electrified vehicles were sold last year. As vehicle numbers increased worldwide and people adopted electrified vehicles, IGBT sales in automotive applications showed rapid growth. This will continue at a fast pace from 2016–2022.

As one of the leading vendors of IGBTs, Infineon has devoted more than 20 years to device design innovation. It now commands more than 20 percent of the market, leading in both IGBT discretes and modules.

The HybridPACK Drive power module is the latest power packaging specifically designed for automotive applications. The FS820R08A6P2B drives 820A and uses a new copper pin-fin dissipation structure optimized for direct liquid cooling. This improves its thermal cycling capability and extends the lifetime of the power module.

The terminals are connected directly to the Direct-Bonded Copper (DBC) substrate, without wire bonding. The new press-fit pin technology allows easy and optimized system integration.

The IGBT diode is manufactured with the new Electric Drive Train 2 (EDT2) design, which reduces conduction and switching losses. The innovative structure is based on Micro-Pattern-Trench-Field-Stop cell design and is composed of active gate, source and dummy gates with inactive mesas.

Based on a complete teardown analysis, the report provides an estimation of the production cost of the IGBT, diode and package. It offers a comparison between Infineon’s IGBT4 and EDT2 devices and HybridPACK 2 and HybridPACK Drive modules. It highlights the differences in design and manufacturing processes and their impact on device size and production cost.

Overview / Introduction

• Executive Summary
• Reverse Costing Methodology

Company Profile

• Infineon

Physical Analysis

• Overview of the Physical Analysis
• Package Analysis
  • Package opening
  • Package cross-section
• IGBT Die
  • IGBT die view and dimensions
  • IGBT die process
  • IGBT die cross-section
  • IGBT die process characteristics

IGBT Manufacturing Process

• IGBT Die Front-End Process
• IGBT Die Fabrication Unit
• Final Test and Packaging Fabrication Unit

Cost Analysis

• Overview of the Cost Analysis
• Yield Explanations and Hypotheses
• IGBT Die
  • IGBT die front-end cost
  • IGBT die probe test, thinning and dicing
  • IGBT wafer cost
  • IGBT die cost
• Complete IGBT
  • Packaging cost
  • Final test cost
  • Component cost

Price Analysis

• Estimation of Selling Price

Comparison

• Comparison with Infineon HybridPACK 2
• Comparison Between Infineon IGBT4 and IDT2

• 1200V Silicon IGBT vs SiC MOSFET Comparison 2018
• Power Discrete Packaging Comparison 2018
• Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
• 1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison
• Mitsubishi J1- Series 650V High-Power Modules for Automotive
• Status of the MEMS Industry 2018
• GaN Systems GS61004B GaN HEMT
• MEMS Pressure Sensor Comparison 2018
• 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon
• Infineon FF400R07A01E3 Double Side Cooled IGBT Module