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Power Electronics

Infineon CoolMOS C7

Published
24/04/2014
Product code
SP14171
Price
EUR 6990
Applications
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7th generation Superjunction MOSFET

The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.

The CoolMOSTM C7 offers a very low on-resistance (between 19mΩ and 225mΩ), and a fast switching speed, more than 100KHz. The C7 differs from the C6 via a new multi-epitaxy technology and an original contact solution.

This reverse costing report provides an estimation of the production cost of the IPD65R225C7, a discrete CoolMOS transistor.

 

 

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1. Overview / Introduction

 2. Companies Profile

  • Infineon Profile

 3. IPD65R225C7 Characteristics

  • IPD65R225C7 Characteristics

 4. IPD65R225C7 Physical Analysis

  • Physical Analysis Methodology
  • Package Views & Dimensions
  • Package Cross-Section
  • Leadframe

MOSFET

  • Die View, Dimensions & Marking
  • Gate Supply Line
  • Guard Ring
  • Delayering
  • Metal Layers
  • Source and Gate
  • Source Cross-Section
  • Substrate and Epitaxy Layers
  • Superjunction Structure
  • Backside
  • MOSFET Characteristics

5. Manufacturing Process Flow

  • Global Overview
  • MOSFET Front end Unit
  • MOSFET Tests Unit
  • Transistor Process Flow

6. Cost Analysis

  • Synthesis of the cost analysis
  • Main steps of economic analysis
  • Yields Hypotheses
  • MOSFET Epitaxy Cost
  • MOSFET Front-End Cost
  • MOSFET Wafer Cost
  • MOSFET Cost per process steps
  • MOSFET : Equipment Cost per Family
  • MOSFET : Material Cost per Family
  • MOSFET : Back-End : Probe and
  • IPD65R225C7 – Package
  • IPD65R225C7 – Final Test

 7. Price Estimation

 Contact

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