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GaN Systems HEMT Embedded Power Die Package

Product code
EUR 2 990
Available sample Available flyer Ask for info

The GS66508P from GaN Systems is a GaN on Silicon HEMT transistor packaged in a new GaNpx Embedded Die package. It features a high-voltage breakdown voltage of 650V for a current of 30A (25°C), with lower switching losses and higher frequency operating. The transistor is optimized for AC-DC converters and high frequency, high efficiency power conversion.

The GS66508P is packaged is an innovative embedded die package developed by AT&S (ECP process). This package has no wire bonding to reduce the inductance and a specific design to increase the heat dissipation using the two sides of the die.

The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layers structure is used to reduce the stress and the dislocation. This is completed by a thick superlattice structure clearly visible in the TEM analysis.

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Overview / Introduction

Companies Profile

Physical Analysis

  • Physical Analysis Methodology
  • GaNpx Package (AT&S ECP®)
    • Package Views & Dimensions
    • X-Ray
    • Package Cross-Section
    • ECP Process Characteristic
  • Redistribution
  • GaN Transistor Analysis
    • Guard Ring
    • Metal Layers
    • Source and Gate
    • Source Cross-Section
    • Substrate and Epitaxy Layers
    • TEM Cross-Section
    • GaN Transistor Characteristics

Manufacturing Process Flow

  • Global Overview
  • GaN Transistor Process Flow
  • Package Process Flow

Cost Analysis

  • Main steps of economic analysis
  • Yields Hypotheses
  • GaN Transistor Front-End Cost Analysis
    • Epitaxy Cost
    • Wafer Cost
    • Cost per process steps
    • Equipment Cost per Family
    • Material Cost per Family
    • Probe Test Cost
  • Redistribution & Dicing Cost
  • GaN Transistor Die Cost
  • GaNpx Package Cost Analysis

    • ECP® Panel Efficiency
    • ECP® Panel Cost
  • GS66508P Final Test Cost
  • GS66508P Component Cost

Price Estimation

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