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GaN Systems GS66508P 650V HEMT

Product code
EUR 2 990
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The GS66508P from GaN Systems is a GaN on Silicon HEMT transistor 650V high-voltage in a new GaNpx Embedded Die package. With a breakdown voltage of 650V for a current of 30A, (25°C), with lower switching losses and higher frequency operating. The transistor is optimized for AC-DC converters and high frequency, high efficiency power conversion.

The GS66508P is packaged is an innovative embedded die package developed by AT&S. The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layers structure is used to reduce the stress and the dislocation. This is completed by a thick superlattice structure clearly visible in the TEM analysis.


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Overview / Introduction

Companies Profile

Physical Analysis

  • Physical Analysis Methodology
  • Package Views & Dimensions
  • X-Ray
  • Package Coross-Section
  • GaNpx – ECP technology
  • Redistribution
  • GaN transistor Analysis
  • Guard Ring
  • Metal Layers
  • Source and Gate
  • Source Cross-Section
  • Substrate and Epitaxy Layers
  • TEM Cross-Section
  • GaN Transistor Characteristics

Manufacturing Process Flow

  • Global Overview
  • GaN Transitor Process Flow
  • Package Process Flow

Cost Analysis

  • Synthesis of the cost analysis
  • Main steps of economic analysis
  • Yields Hypothèses
  • GaN Transitor Front-End Cost
  • GaN Transistor Wafer Cost
  • GaN Transistor Cost per process steps
  • GaN Transistor: Equipment Cost per family
  • GaN Transistor: Material Cost per family


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