Compound Semiconductors And Emerging Substrates

Discover how GaN Systems has designed its high-current, low-voltage PCB embedded GaN-on-Si transistor.

There are only two main players in low–voltage GaN: EPC and GaN Systems, a fact mainly due to the complexity of using a standard package with low losses. GaN Systems wants to compete with EPC, the market leader, in the low-voltage HEMT market. System Plus Consulting unveils the GS61004B from GaN Systems, the latest device driving 100V and optimized for AC-DC converters and high-frequency, high-efficiency power conversion.

The GS61004B from GaN Systems is a GaN-on-silicon HEMT transistor packaged in the GaNpx embedded die package. This embedded die package is unique to the market in that it allows for high current capability. The GS61004B has a die size of around 4 mm2 and carries up to 45A, which means more than 10A/mm2, almost 3x higher than the competition.

The GS61004B is packaged in an innovative embedded die package developed by AT&S (ECP® process). This package has no wire bonding, which reduces inductance, and its design increases heat management. The die’s new position in the package facilitates enhanced thermal dissipation, and a simplification of the process reduces manufacturing time and cost.

Based on a complete teardown analysis, this report also provides an estimated production cost for the epitaxy and the package. Moreover, this report compares standard 100V Si MOSFETs and low-voltage GaN on Si HEMT.

                 

Overview / Introduction

• Executive Summary
• Reverse Costing Methodology

Company Profile 

• GaN Systems
• Products

Physical Analysis

• Summary of the Physical Analysis
• Package Analysis
  • Package opening
  • Package cross-section
• HEMT Die
  • HEMT die view and dimensions
  • HEMT die process
  • HEMT die cross-section
  • HEMT die process characteristics

Transistor Manufacturing Process 

• HEMT Die Front-End Process
• HEMT Die Fabrication Unit
• Final Test and Packaging Fabrication Unit

Cost Analysis 

• Cost Analysis – Summary
• Yields Explanation and Hypotheses
• HEMT Die
  • HEMT front-end cost
  • HEMT die probe test, thinning and dicing
  • HEMT wafer cost
  • HEMT die cost
• Complete Device
  • Packaging cost
  • Final test cost

Price Analysis 

• Estimated Sales Price

Comparison

• Comparison of GaN Systems’ Devices
• Comparison of GaN Systems and EPC 100V HEMT
• Comparison between 100V GaN-on-Si and Si MOSFET

• Littelfuse Silicon Carbide MOSFET LSIC1MO120E0080: 1200V 25A 80mOhms
• GaN-on-Silicon Transistor Comparison 2018
• EPC2045 100V GaN-on-Silicon Transistor
• SiC Transistor Comparison 2021
• Discrete Power Device Packaging Comparison 2021
• BCD Technology and Cost Comparison 2021
• EPC2152 Half Bridge Monolithic GaN IC
• STMicroelectronics MASTERGAN1 Half-Bridge Driver
• SiC Transistor Comparison 2020
• GaN Power Transistor Comparison 2020