Compound Semiconductors And Emerging Substrates

Comparison of the technology and cost of 18 GaN devices from: EPC, GaN Systems, Infineon, Innoscience, Navitas, Nexperia, Panasonic, Power Integrations, Texas Instruments and Transphorm.

GaN devices are gaining the confidence of many customers and are penetrating various applications. This is confirmed by the promising market outlook for GaN devices having a compound annual growth rate (CAGR) of 81% for the period 2019-2025 according to Yole Développement. This relates to market forces pushing for loss reduction and improved efficiency.

Since their first commercialization in 2010, the performance of GaN devices and the value that they add have been gradually proven. Their price has also become increasingly acceptable to end users. Manufacturers use different approaches for device design, depending on the targeted electrical performance and application.

GaN devices still have some technical and commercial challenges to face. For example, both GaN wafer processing and packaging impact the price and make it the major cost-driver of a GaN device. Other challenges include the complexity of some process steps, mainly epitaxy, which hinder GaN adoption on a large commercial scale.

In this report, System Plus Consulting presents an overview of the state-of-the-art of GaN power devices. It highlights differences in design and manufacturing processes, and their impact on device size and production cost. Overall, it analyses 18 devices from ten of the main suppliers: EPC, GaN Systems, Infineon, Innoscience, Navitas, Nexperia, Panasonic, Power Integrations, Texas Instruments and Transphorm. The report includes optical and SEM pictures of the devices to understand the technological choices at die design and assembling level.

This report includes an estimated manufacturing cost of the analysed GaN devices and their selling prices. It provides physical, technological, and manufacturing cost comparisons between the analysed devices.

Overview/Introduction

• Executive Summary
• Reverse Costing Methodology
• Glossary

Technology and Market                                                                                          

Company Profile           

Physical Analysis

• Low Voltages
  • EPC: EPC2040, EPC2024, EPC2214
  • Texas Instruments: LMG5200
  • GaN Systems: GS61004B
• Medium Voltages
  • Infineon: IGT40R070D1 E8220, IGOT60R070D1
  • Panasonic: PGA26E19BA
  • Texas Instruments: LMG3410R070
  • Transphorm: NTP8G206NG/TPH3206PS, TPH3208PS, TP65H035G4WS, TP90H180PS
  • GaN Systems: GS66504B
  • Navitas: NV6115
  • Nexperia: GAN063-650WSA
  • Innoscience: INN650D02
  • Power Integrations: SC1923C

Technology and Physical Comparison

• Physical and Technology Comparison
• Performance Comparison

Manufacturing Process Flow

• EPC, TI, Infineon, GaN Systems, Transphorm, Navitas, Panasonic, Power Integrations, Nexperia, Innoscience

Cost and Price Analysis

• Summary, Yields Explanation and Hypotheses
• Low Voltages
• Medium Voltages
• For Each Analyzed Device:
  • Wafer cost, die cost, packaging cost, component cost and component price

Cost Comparison

• Global Comparison – Component Cost
• Low Voltages – Wafer and Ampere Cost Comparison
• Low Voltages – Component Cost Breakdown Comparison
• Medium Voltages – Wafer and Ampere Cost Comparison
• Medium Voltages – Component Cost Breakdown Comparison

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System Plus Consulting Services

• EPC2152 Half Bridge Monolithic GaN IC
• STMicroelectronics MASTERGAN1 Half-Bridge Driver
• MACOM NPA1008 RF Power Amplifier with GaN-on-Si HEMT
• 200V EPC2112 eGaN® HEMT with Monolithic Optimized Gate Driver
• GaN-on-Sapphire HEMT Power IC by Power Integrations
• Infineon 600V CoolGaN Transistor Family
• Navitas 650V GaNFast Power IC Family
• UnitedSiC UJN1205K 1200V SiC JFET
• GaN Systems GS61004B GaN HEMT
• Littelfuse Silicon Carbide MOSFET LSIC1MO120E0080: 1200V 25A 80mOhms