POWER GaN

Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.

The market for GaN high-electron-mobility transistors (HEMTs) is very appealing, drawing in ever more manufacturers. This factor lowers prices, making GaN devices good competitors for the currently-used silicon-based power switching transistors such as MOSFETs and IGBTs.

Nevertheless, the technical details are still unsettled, with every manufacturer presenting its own solution to die design and packaging integration. This brings fierce competition, which will accelerate technical innovation and further lower prices. Moreover, GaN business models are still very different, and in the future we will see supply chain restructuring driven by the main cost factors. Manufacturers propose different approaches for epitaxy, gate structure, device design, and packaging, all focused on solving the problems linked to GaN’s intrinsic properties and its integration with silicon.

In this report, System Plus Consulting presents an overview of the state of the art of GaN-on-silicon HEMTs to highlight the differences in design and manufacturing processes, and their impact on device size and production cost. We have analysed different devices at low and medium voltage from EPC, Texas Instruments, Panasonic, GaN Systems and Transphorm. The report includes detailed optical, Scanning Electron Microscope and Transmission Electron Microscope pictures of the packaging, the transistor structures and the epitaxy.

This report provides an estimated production cost for the integrated circuit gate driver, transistor, and package. It also compares the different components available on the market.

COMPLEMENTARY REPORT

Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends – by Yole Développement

The GaN power device supply chain is acting to support market growth.

Bundle offer possible for the GaN on Si Transistor Comparison 2018 Report by System Plus Consulting, contact us for more information.

KEY FEATURES OF THE REPORT:

• In-depth analysis of GaN’s penetration in different applications including power supplies, PV, EV/HEV, UPS, lidar, wireless power and electrical transmission
• State-of-the-art GaN power devices, including product charts and device descriptions
• Description of the GaN power industrial landscape, from epitaxy and device design to device processing
• Discussion of GaN power market dynamics
• State-of-the-art for power GaN packaging
• Reliability overview on GaN
• Market projection for the GaN epitaxy market through 2021 by value and volume

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Overview/Introduction

• Executive Summary
• Reverse Costing Methodology

Technology and Market

Company Profile

• EPC
• Texas Instruments
• Transphorm
• GaN Systems
• Panasonic

Physical Analysis

• Low Voltage
  • EPC: EPC1010, EPC2010C and EPC2045
  • Texas Instruments: LMG5200
• Medium Voltage
  • Transphorm: TPH3002PS, TPH3206PS and TPH3208PS
  • GaN Systems: GS66508P, GS66506T and GS66504B
  • Panasonic: PGA26E19BA
  • Texas Instruments: LMG3410

Transistor Manufacturing Process

• EPC
• Texas Instruments
• Transphorm
• GaN Systems
• Panasonic

Cost and Price Analysis

• Summary of the Cost Analysis
• Yield Explanations and Hypotheses
• Low Voltage
  • EPC: EPC1010, EPC2010C, EPC2045 and EPC2040
  • Texas Instruments: LMG5200

• Medium Voltage
  • Transphorm: TPH3002PS, TPH3206PS and TPH3208PS
  • GaN Systems: GS66508P, GS66506T and GS66504B
  • Panasonic: PGA26E19BA
  • Texas Instruments: LMG3410

• Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends
• Medium Voltage GaN HEMT vs Superjunction MOSFET Comparison 2019
• EPC2152 Half Bridge Monolithic GaN IC
• GaN Systems GS61004B GaN HEMT
• Texas Instruments’ LMG5200 GaN Power Stage
• EPC2045 100V GaN-on-Silicon Transistor
• Texas Instruments LMG3410 600V GaN FET Power Stage
• Panasonic 600V GaN HEMT PGA26E19BA
• Transphorm TPH3208PS 650V GaN HEMT
• Panasonic PGA26C09DV 600V GaN HEMT