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BCD Technology and Cost Comparison 2021 - Infineon galvanic isolation – SEM Cross-Section - System Plus Consulting

BCD Technology and Cost Comparison 2021

Published
23/09/2021
Product code
SPR21594
Price
EUR 6,490
Applications
Automotive & Mobility Defense & Aerospace Industrial Medical Mobile & Consumer Telecom & Infrastructure
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In-depth comparative study of 40 BCD technologies from the major 17 manufacturers (Infineon, STMicroelectronics, NXP, Renesas, etc.).

BCD Technology and Cost Comparison 2021 - Infineon galvanic isolation – SEM Cross-Section - System Plus Consulting

This report presents an in-depth analysis of the latest innovations in Bipolar-CMOS-DMOS devices. It shows the differences between 40 selected devices from Infineon, STMicroelectronics, Elmos, Bosch, NXP, Littlefuse, Texas Instruments, Analog Devices, Tower Semiconductor, Denso, Renesas, Toyota, Toshiba, Mitsubishi, Rohm, and TSMC. The report covers all the major players in the market and their new technologies.

In this 2021 version, you will find:

  • More details on galvanic isolation.
  • Four new manufacturers: Xfab, Mitsubishi, Rohm, TSMC.
  • Nine new technologies, 90nm, high voltage.
  • An update of the wafer cost calculation for the 31 technologies shown in this report’s 2020 version. Several effects of COVID and the shortage on manufacturing cost have been simulated for this update.

BCD (Bipolar-CMOS-DMOS) has been developed to simplify the control of power devices by proposing a monolithic IC solution to integrate different functions such as the gate driving circuit and current/temperature measurements to protect the power component in the same silicon IC.

The 2021 version adds nine new technologies from seven manufacturers and four new manufacturers (X-Fab, Mitsubishi, Rohm, and TSMC), who have adopted very different solutions analyzed in this report. Additionally, 13 SOI technologies are studied in this report, with technology nodes ranging from 3µm – 90nm. The components range from monolithic piloted power transistors to microcontrollers with high-voltage analog inputs and outputs.

For each analyzed device, this report details the manufacturing process and materials used, the component design, and the technical choices. The cost report provides an estimation of the cost structure of the wafers using the various technologies, highlighting the influence of the technological innovations.

This report also offers a unique opportunity to understand the technology evolutions and the manufacturing cost of the major BCD manufacturers, and furnishes the basics for an optimal choice of components during design and integration.

In this report, System Plus Consulting analyzes and compares products from the 17 main manufacturers, with a focus on technology evolution and a description of the cost impact of these innovations. Technical and cost comparisons of the main parameters, transistors, metal layers, isolation, and passives are all performed.

BCD Technology and Cost Comparison 2021 - STMicroelectronics – BCD6s-offline floating structure – Top View - System Plus Consulting BCD Technology and Cost Comparison 2021 - Tower Semiconductor SOI-BCD 0.318µm – Cross-Section - System Plus Consulting BCD Technology and Cost Comparison 2021 - Tower Semiconductor – BCD Cross-Section - System Plus Consulting
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Overview / Introduction

  • Executive Summary

Technologies Evolution

  • Transistors
    • Summary
    • Gate Oxides
    • LDMOS and VDMOS
  • Isolation
    • Summary
    • LOCOS and STI
    • Deep Trench Isolation
    • Substrate SOI
    • Galvanic Isolation
  • Metal Layer Process
    • Summary
    • Aluminum and Tungsten Plug
    • Copper Metal Layer
    • Thick Metal Layer
  • Passives
    • Summary
    • Capacitor in Polysilicon
    • Resistor in Polysilicon
    • Metal Insulator Metal Capacitor
    • Thin Film Resistors
    • Inductors
  • Shrink
  • High Voltage

Foundry Technologies

  • Infineon
    • Roadmap
    • SPT9 Process
    • BCD 90nm
    • SMART6 Process
    • Infineon’s Thin-Film SOI-Technology
    • STMicroelectronics: BCD6s, SOI-BCD6s, BCD6s-offline, BCD8, SOI-BCD8, BCD9, VIPower M0-3, VIPower M0-5, VIPower M0-7
  • Elmos: BCD 0.8µm
  • Bosch: BCD6, BCD8
  • Melexis-X-Fab: BCD 0.35µm
  • NXP: A-BCD3, A-BCD9, SMARTMOS8, SMARTMOS10
  • Littelfuse: BCDMOS on SOI High Voltage
  • Texas Instruments: LBC5, LBC5-SOI, LBC8, LBC9
  • Analog Devices: BCD 0.5µm, BCD 0.18µm, BCD 0.7µm
  • Tower Semiconductor: BCD 0.4µm, SOI-BCD 0.18µm, BCD 0.18µm
  • Denso: SOI-BCD 0.8µm, SOI-BCD 0.5µm
  • Renesas: BCD 0.15µm
  • Toyota: SOI-BCD 0.5µm
  • Toshiba: SOI High Voltage
  • Mitsubishi: BCD 3µm
  • Rohm: BCD 0.5µm
  • TSMC: BCD 0.35µm
  • Synthesis Comparison

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