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SP20485-Infineon Vertical MOSFET – Cross-Section

BCD Technology and Cost Comparison 2020

Product code
EUR 6990
Automotive & Mobility Industrial Mobile & Consumer
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In-depth comparative study of 31 Bipolar-CMOS-DMOS technologies with a focus on Silicon-on-Insulator high voltage devices from the 15 leading manufacturers.


This report presents an in-depth analysis of the latest innovations in Bipolar-CMOS-DMOS (BCD) devices, showing the differences between 31 selected devices from Infineon, STMicroelectronics, Elmos, Bosch, NXP, IXYS, Freescale, Texas Instruments, Linear Technology, Analog Devices, Maxim/TowerJazz, Denso, Renesas, Toyota and Toshiba.

This 2020 version adds eight new technologies from seven existing manufacturers, and another three new manufacturers, IXYS, Maxim and Toshiba. It focuses on high voltage technologies, over 200V and up to 600V, with the Silicon-on-Insulator (SOI)-based solutions from Infineon at 600V, Ixys at 200V and Toshiba at 500V..The technology nodes range from 2.5µm up to 90nm and the components range from monolithic piloted power transistors to microcontrollers with high voltage analog inputs and outputs.

For each analyzed device, the report details the manufacturing process and materials used, the component design and technical choices. Moreover it provides an estimation of the cost structure of the wafers using the various technologies, highlighting the influence of the technological innovations.

This report provides a unique opportunity to understand the technology evolutions and the manufacturing cost of the major BCD manufacturers, to give the basics for an optimal choice of components during design and integration.

The report is focused on technology evolution with a description of the cost impact of these innovations. It includes technical and cost comparisons of main parameters, the transistors, the metal layers, the insulation and the passive devices.

SP20485-Infineon Vertical MOSFET – Cross-SectionSP20485-Ixys – BCDMOS on SOI 200V – Top ViewSP20485- IXYS – BCDMOS on SOI Cross-Section

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Executive Summary

Technology Evolution

  • Transistors
    • Gate oxides
    • LDMOS and VDMOS
    • Summary
  • Insulation
    • LOCOS and STI
    • Deep trench isolation
    • Substrate SOI
    • Summary
  • Metal Layer Process
    • Aluminum and tungsten plug
    • Copper metal layer
    • Thick metal layer
    • Summary
  • Passives
    • Capacitors in polysilicon
    • Resistors in polysilicon
    • Metal insulator metal capacitor
    • Thin film resistors
    • Inductors
    • Summary
  • Shrink
  • High Voltage

Foundry technologies 

  • Infineon
    • Roadmap
    • SPT9 process
    • SMART6 process

Thin film SOI

  • STMicroelectronics: BCD6s, SOI-BCD6s, BCD8, BCD9, VIPower M0-3, VIPower M0-5, VIPower M0-7
  • Elmos: BCD 0.8µm
  • Bosch: BCD6, BCD8
  • NXP: A-BCD3, A-BCD9
  • IXYS: BCDMOS on SOI High Voltage
  • Freescale: SMARTMOS8, SMARTMOS10
  • ON Semiconductor
  • Texas Instruments: LBC5, LBC5-SOI, LBC8, LBC9
  • Linear Technology: BCD 0.7µm
  • Analog devices: BCD0.5µm, BCD 0.18µm
  • Maxim/TowerJazz : BCD 0.4µm
  • Denso: SOI-BCD 0.8µm, SOI-BCD 0.5µm
  • Renesas: BCD0.15µm
  • Toyota: SOI-BCD 0.5µm
  • Toshiba: SOI High Voltage
  • Comparisons
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