Power Electronics

This report presents an in-depth analysis of the latest innovations in 40V MOSFETs devices. It shows the differences between 18 selected devices from Infineon, International Rectifier (IR), Fairchild, ON Semiconductor and STMicroelectronics. For each device, the report details the manufacturing process and materials used, packaging structure, component design, die size, electrical performance and current density. It then compares the components’ electrical performance, technical choices and cost structure.

40V silicon MOSFETs are standard devices commonly used in many applications, such as automotive, industry, computing and storage, home appliances and audio and imaging. According to Yole Développement, the overall market for MOSFETs rated up to 40V was worth $2.64B in 2015.

In the report, we analyze products from the five main manufacturers. Among them Fairchild and IR have been recently acquired by ON Semiconductor and Infineon, respectively. These acquisitions will push the companies to choose, in the near future, between products in the portfolio, based on cost and performance.

We also show the technical choices in the design of the devices and find that the most common design is a gate trench with diode shield. However die dimensions vary widely, leading to cost differences.

Overview / Introduction

Introduction & Market

• Executive Summary
• Power Device Life Cycle
• MOSFET Manufacturing Process
• MOSFET Technology
• MOSFET History
• MOSFET Players
• Devices Analysed

Technology and Cost Analysis

• MOSFET performance
• Infineon
  • Company Profile
  • Device Performance
  • Device Cost Structure
  • BCS010N04LS
  • IPD100N04S4
  • BSC016N04LS
  • IPZ40N04S5L
• IR
  • Company Profile
  • Device Performance
  • Device Cost Structure
  • IRFS3004TRL7PP
  • IRL7472L1TRPbF
• ON Semiconductor
  • Company Profile
  • Device Performance
  • Device Cost Structure
  • NVTFS5811NLTAG
  • NTTFS5C453NLTAG
  • NVMFS5C404NT1G
• Fairchild
  • Company Profile
  • Device Performance
  • Device Cost Structure
  • FDMS8320LDC
  • FDBL0065N40
• STMicroelectronics
  • Company Profile
  • Device Performance
  • Device Cost Structure
  • STD64N4F6AG
  • STP360N4F
  • STH410N4F7

MOSFET Comparison

• 100A MOSFET
• 200A MOSFET

• Industrial 100V MOSFET Technology and Cost Review
• Discrete Power Device Packaging Comparison 2021
• Silicon IGBT Comparison 2021
• Medium Voltage GaN HEMT vs Superjunction MOSFET Comparison 2019
• Automotive Power Module Packaging Comparison 2018
• GaN on Si HEMT vs SJ MOSFET : Technology and Cost Comparison
• BCD Technology and Cost Comparison 2021
• Smartphones PMIC Comparison 2021
• Automotive Low-Voltage Si MOSFET Comparison 2021
• Power Module Packaging 2018: Material Market and Technology Trends