IC & RF Memory

3D NAND Memory Comparison 2019

Published: 02/12/2019
Product code: SP19483
Price: EUR 6 490
Applications: Consumer

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Introduction
Summary
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Complete technology and cost analysis of 3D NAND memories from Toshiba/SanDisk, Samsung, SK Hynix and Micron.

Demand for higher capacity, improved read and write speed from Non-Volatile Memory continues to grow. To increase the density and keep the chip size small all NAND manufacturers have altered their manufacturing process to densify their new generation memories.

NAND revenue is expected to decline by 26% in 2019, with oversupply leading to substantial average selling price (ASP) declines. In order to accelerate bit growth and reduce NAND cost, all the four main manufacturers have added more word lines to their process. Meanwhile, new competition from YMTC will affect the NAND memory market.

This report presents a detailed study of the latest 96-layer technology from Toshiba and SanDisk, 92-layer technology from Samsung, 72-layer technology from SK Hynix and 96-layer technology from Micron. The high-quality optical images and high-resolution scanning electron microscope (SEM) images are extracted to give physical details of the die cross-sections, including material identification. The report includes process details to better understand the major fabrication steps used by each manufacturer. It also includes cost estimation for producing each memory type spanning different word line counts in the 3D NAND chips, and their packaging cost.

Finally, this report features a comparison of the four 3D NAND devices analyzed, comparing the wafer cost, die cost and finally cost per gigabyte produced by each manufacturer. The report also identifies the different and similar features of the latest memories and compares the fabrication cost and the impact of the layer scaling.