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PUISSANCE Si Diode

Power Integrations – Qspeed LXA20T600

Publié
26/04/2011
Code produit
SP11060
Prix
1 990 EUR
Applications
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System Plus Consulting is pleased to publish a reversecosting report on the LXA20T600 silicon power Diode from Power Integrations.

The LXA diode family is the first to integrate a gate control in a diode.

This 600V Diode offers a very low QRR (140nC125°C) Based on a complete teardown process, the report provides an estimation of the production cost as well as the objective selling price of theLXA20T600.

This reverse costing report of the first SiDiode transistor contains:

  • Detailed photos
  • Materia lanalysis
  • Manufacturing process flow
  • In-depth economical analysis
  • Manufacturing cost breakdown
  • Selling price estimation
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Executive Summary

Table of Contents

Reverse Costing Methodology

1. Physical Analysis

  • Physical Analysis Methodology
  • Component Electrical Characteristics
  • Package Markings
  • Package Opening
  • Diode Die Overview
  • Cross Section
  • Leadframe& Back Side
  • Anode Area
  • EpitaxyLayer
  • Guard Ring
  • Diode Trench
  • Control Gate Trench
  • Diode Structure

2. Manufacturing Process

  • Process Flow
  • Front Side Process Flow
  • Back Side Process Flow
  • Wafer Fabrication Unit

3. Manufacturing Cost

  • Economic Analysis
  • Yields Explanation
  • UnprobedDiode Wafer Cost
  • Breakdown per Process Steps
  • Breakdown per Equipments
  • Breakdown per Consumables
  • Probe Test Cost
  • Dicing Cost & Package cost
  • Final Test Cost
  • Component Manufacturing Cost
  • Yields synthesis

4. Average Selling Price

  • Definitions of Prices
  • Estimation of the Selling Price

Conclusion

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