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PUISSANCE IGBT MOSFET SiC

1200V Silicon IGBT vs SiC MOSFET Comparison 2018

Publié
26/09/2018
Code produit
SP18388
Prix
EUR 4990
Applications
Automobile Grand public Industriel
Extrait disponible Brochure disponible Demande d'info

Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.

Silicon (Si)-based IGBTs have been on the market for more than 30 years. The technology has quickly evolved, reducing the costs and improving performance at the same time. As Si devices approach their physical limits, wide-band-gap devices, in particular made from silicon carbide (SiC), have emerged on the market, offering better performance thanks to their intrinsic properties.

SiC MOSFETs and Si IGBTs are in competition in various applications in the 1200V range. As of 2018, the SiC MOSFET market is still small compared to that for Si IGBTs due to lack of maturity and high cost. However, market acceptance is increasing as the technology improves, costs fall and more device manufacturers enter the market.

In this report, System Plus Consulting presents an overview of the state of the art of 1200V Si IGBTs and SiC MOSFETs. We highlight the differences in design and manufacturing processes, and their impact on device size and production cost.

We have analysed different Si and SiC devices from Infineon, STMicro-electronics, Fuji, ON Semiconductor, Mitsubishi, Rohm, Wolfspeed and Littelfuse. The report includes detailed optical and Scanning Electron Microscope pictures of the transistor design, cross sections and epitaxy.

This report provides design information, an estimated production cost for every transistor and compares the different components available on the market.

 

  
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Overview/Introduction

  • Executive Summary
  • Reverse Costing Methodology

Technology and Market

Company Profile

Physical Analysis

  • 1200V Si IGBT
    • Infineon
      • IHW40N120R3
      • IGC99T120T8RL
      • AUIRG4PH50S
      • IRG7PH46UD-EP
    • STMicroelectronics
      • STP16N65M5
      • STGWA40S120DF3
    • Fuji
      • FGW40N120HD
    • Littelfuse
      • IXGP30N120B3
      • IXGK120N120A3
      • IXDN75N120
    • Mitsubishi
      • CM450DY-24S
    • ONSemiconductors
      • FGH40N120ANTU
      • NGTB25N120FL2WAG
  • 1200V SiC MOSFET
    • Wolfspeed
      • CMF20120
      • C2M0080120D
      • C2M0025120D
    • Rohm
      • SCH2080KE
      • BSM180D12P3C007
    • STMicroelectronics
      • SCT30N120
    • Littelfuse
      • LSIC1MO120E0080
    • Infineon
      • DF11MR12W1M1_B11

Transistor Manufacturing Process

Cost and Price Analysis

  • Summary of the Cost Analysis
  • Yields Explanation and Hypotheses
  • 1200V Si IGBT
  • 1200V SiC MOSFE

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