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Wafer Cost Breakdown - 1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison - System Plus Consulting

1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison

Published
20/12/2016
Product code
SP16288
Price
EUR 4 490
Applications
Automotive Industrial
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The report provides an in-depth analysis of the latest innovations in 1200V power devices showing the differences between silicon field-stop, punch-through (PT) and carrier stored trench bipolar transistor IGBTs and planar and trench silicon carbide (SiC) MOSFETs from the technical and economic points of view. It includes details on manufacturing processes and materials, packaging structures, component designs, die sizes, electrical performance, current density, and more.

Silicon IGBT technology was first commercially released in 1986 with a PT technology and continues to improve and develop. SiC MOSFETs offer new capabilities, such as the possibility of working at higher frequencies and temperatures.

SiC MOSFETs are good candidates to enter the 1200V power device sector, but the high manufacturing cost and at improvement of silicon IGBTs will keep the latest models on the market and drive towards standardization and popularization of these devices.

To understand technological innovations in silicon IGBTs and SiC MOSFETs, we have opened and analyzed 16 devices from 7 different manufacturers: Infineon, STMicroelectronics, Fuji Electric, IXYS, Mitsubishi, Rohm, and Wolfspeed. The report includes detailed pictures of device structures and cost breakdown analyses of the manufacturing processes.

 

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Introduction and Market

  • Executive summary
  • Power electronics market
  • Main players
  • Analyzed devices

1200V Silicon IGBT

  • Technology overview
  • IGBT market and players
  • 1200V Silicon IGBT performance
  • Infineon
    • Infineon performance and cost structure
    • IHW40N120R3
    • IGC70T120T6RM
    • IGC99T120T8RL
  • STMicroelectronics
    • STMicroelectronics performance and cost structure
    • STP16N65M5
  • Fuji
    • Fuji performance and cost structure
    • FGW30N120HD
    • FGW40N120HD
  • Mitsubishi
    • Mitsubishi performance and cost structure
    • CM450DY-24S
  • Silicon IGBT comparison

SiC MOSFET

  • Technology overview
  • MOSFET performance
  • Wolfspeed/Cree
    • Cree performance and cost structure
    • Cree evolution
    • GS66508P
    • GS66506T
  • Rohm
    • Rohm performance and cost structure
    • Rohm evolution
    • TPH3002PS
    • NTP8G206NG
  • STMicroelectronics
    • STMicroelectronics performance and cost structure
    • STP16N65M5
  • SiC MOSFET comparison

SiC MOSFET vs Silicon IGBT Technology Comparison

 

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