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Panasonic 600V GaN HEMT PGA26E19BA uses a DFN 8x8 package for its normally-off GaN HEMT structure - System Plus Consulting

Panasonic 600V GaN HEMT PGA26E19BA

Report type
Reverse Costing
Manufacturer
Panasonic
Reference
Panasonic PGA26E19BA
Device type
GaN,
Published
23/05/2017
Product Code
SP17322
Applications
Consumer Industrial
Available flyer Available sample
Transphorm TPH3208PS 650V GaN HEMT: with a simplified cascode structure and enhanced electrical characteristics - System Plus Consulting

Transphorm TPH3208PS 650V GaN HEMT

Report type
Reverse Costing
Manufacturer
Transphorm
Reference
Transphorm TPH3208PS
Device type
GaN,
Published
10/05/2017
Product Code
SP17319
Applications
Consumer Industrial
Available flyer Available sample
ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete

ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete

Report type
Reverse Costing
Manufacturer
Rohm
Reference
ROHM SCT2H12NZGC11
Device type
GaN, SiC
Published
12/04/2017
Product Code
SP17310
Applications
Industrial
Available flyer Available sample
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure.

Panasonic PGA26C09DV 600V GaN HEMT

Report type
Reverse Costing
Manufacturer
Panasonic
Reference
Panasonic PGA26C09DV
Device type
GaN,
Published
07/02/2017
Product Code
SP17311
Applications
Consumer Industrial
Available flyer Available sample

STMicroelectronics 1200V SiC MOSFET STC30N120

Report type
Reverse Costing
Manufacturer
STMicroelectronics
Reference
STMicroelectronics STC30N120
Device type
SiC
Published
17/01/2017
Product Code
SP17309
Applications
Automotive Industrial
Available flyer Available sample
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